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Crack ((LINK)) Virtual Dj 3.4

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In the two-dimensional DIC method, a series of digital images of a deformed object is compared to a digital image of the same object before deformation or the reference image. Using this method, the desired data can be obtained in two stages: recording successive images during the experiment and post-processing the images afterwards using a software package. In the post-processing stage, at first, square subsets or patches are selected from the reference image. To find the displacement vector, a search is performed by the code in a user-specified zone of the deformed image to find the subset with maximum similarity in intensity pattern to the subsets signature in the reference image. The difference between the subset location in a post-deformation image and the reference image will be the displacement vector of the subsets center which is measured in pixels [3]. In this way, a two-dimensional displacement or strain field is created. In this study, to obtain crack width and strain data, a program called geoPIV, developed by White et al. [4] for monitoring deformations of solids, was employed.

Prior to each test, two digital cameras (Canon EOS Rebel T2i) on tripods were placed at the opposite sides of each beam at the same distance from the beam focusing the central region of one of the shear spans to monitor the shear cracks during the different stages of the each test as can be seen in Fig. 3.

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

A solar cell module lamination process using fluoropolymers to provide protection from adverse environmental conditions and thus enable more extended use of solar cells, particularly in space applications. A laminate of fluoropolymer material provides a hermetically sealed solar cell module structure that is flexible and very durable. The laminate is virtually chemically inert, highly transmissive in the visible spectrum, dimensionally stable at temperatures up to about C. highly abrasion resistant, and exhibits very little ultra-violet degradation.

The results of a study concerned with the effects of the Martian environment on the performance of solar cells are given. The results indicate that the efficiency of a power system composed of solar cells will be greatly reduced when subjected to dust storms such as may occur on Mars. Two factors are responsible for this, (1) accumulation of dust on the protective covers, and (2) damage to covers by pitting, cracking, and chipping. It is recommended that this type of power system not be used on Mars landing vehicles. Experimental procedures are described and results are summarized and damage assessed.

Although solar cells usually have chips and cracks, no material specifications concerning the allowable crack size on solar cells are available for quality assurance and engineering design usage. Any material specifications that the cell manufacturers use were developed for cosmetic reasons that have no technical basis. Therefore, the Applied Solar Energy Corporation (ASEC) has sponsored a continuing program for the fracture mechanics evaluation of GaAs. Fracture mechanics concepts were utilized to develop an analytical model that can predict the critical crack size of solar cells. This model indicates that the edge cracks of a solar cell are more critical than its surface cracks. In addition, the model suggests that the material specifications on the allowable crack size used for Si solar cells should not be applied to GaAs solar cells. The analytical model was applied to Si and GaAs solar cells, but it would also be applicable to the semiconductor wafers of other materials, such as a GaAs thin film


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